Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

• Main Authors: D'Costa, Vijay Richard, Tan, Kian Hua, Jia, Bo Wen, Yoon, Soon Fatt, Yeo, Yee-Chia
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: III-V semiconductors; Critical point phenomena; Dielectric thin films; Dielectric function; Epitaxy
• Online Access: https://hdl.handle.net/10356/104319; http://hdl.handle.net/10220/38809
• Institution: Nanyang Technological University

Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocation...