Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

The relationship between growth temperature and the formation of periodic interfacial misfit (IMF) dislocations via the anion exchange process in InSb/GaAs heteroepitaxy was systematically investigated. The microstructural and electrical properties of the epitaxial layer were characterized using ato...

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Bibliographic Details
Main Authors: Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2017
Subjects:
Carrier mobility
III-V semiconductors
Online Access:https://hdl.handle.net/10356/83623
http://hdl.handle.net/10220/42691
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/83623
http://hdl.handle.net/10220/42691

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