Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

• Main Authors: Lao, Y. F., Perera, A. G. U., Wang, H. L., Zhao, J. H., Jin, Y. J., Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Doping; III-V semiconductors
• Online Access: https://hdl.handle.net/10356/83619; http://hdl.handle.net/10220/42699
• Institution: Nanyang Technological University

Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemissio...