Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemissio...

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書目詳細資料
Main Authors:	Lao, Y. F., Perera, A. G. U., Wang, H. L., Zhao, J. H., Jin, Y. J., Zhang, Dao Hua
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2017
主題:	Doping III-V semiconductors
在線閱讀:	https://hdl.handle.net/10356/83619 http://hdl.handle.net/10220/42699
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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