Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors
Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemissio...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/83619 http://hdl.handle.net/10220/42699 |
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| Institution: | Nanyang Technological University |
| Language: | English |