A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

10.1109/ACCESS.2019.2937545

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Bibliographic Details
Main Authors: Jia, Y., Wen, Z., Chen, Y., Xie, C.-C., Guo, Y.-X., Xu, Y.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:
dispersion
HEMTs
III-V semiconductor materials
scattering parameters
Semiconductor device modeling
threshold voltage
Online Access:https://scholarbank.nus.edu.sg/handle/10635/212344
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/212344

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