A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
10.1109/ACCESS.2019.2937545
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2021
|
| Subjects: | |
| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/212344 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-212344 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-2123442024-11-08T17:32:10Z A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs Jia, Y. Wen, Z. Chen, Y. Xie, C.-C. Guo, Y.-X. Xu, Y. ELECTRICAL AND COMPUTER ENGINEERING dispersion HEMTs III-V semiconductor materials scattering parameters Semiconductor device modeling threshold voltage 10.1109/ACCESS.2019.2937545 IEEE Access 7 120638-120647 2021-12-29T04:38:06Z 2021-12-29T04:38:06Z 2019 Article Jia, Y., Wen, Z., Chen, Y., Xie, C.-C., Guo, Y.-X., Xu, Y. (2019). A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs. IEEE Access 7 : 120638-120647. ScholarBank@NUS Repository. https://doi.org/10.1109/ACCESS.2019.2937545 21693536 https://scholarbank.nus.edu.sg/handle/10635/212344 Attribution-NonCommercial-NoDerivatives 4.0 International https://creativecommons.org/licenses/by-nc-nd/4.0/ Institute of Electrical and Electronics Engineers Inc. Scopus OA2019 |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| topic |
dispersion HEMTs III-V semiconductor materials scattering parameters Semiconductor device modeling threshold voltage |
| spellingShingle |
dispersion HEMTs III-V semiconductor materials scattering parameters Semiconductor device modeling threshold voltage Jia, Y. Wen, Z. Chen, Y. Xie, C.-C. Guo, Y.-X. Xu, Y. A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs |
| description |
10.1109/ACCESS.2019.2937545 |
| author2 |
ELECTRICAL AND COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL AND COMPUTER ENGINEERING Jia, Y. Wen, Z. Chen, Y. Xie, C.-C. Guo, Y.-X. Xu, Y. |
| format |
Article |
| author |
Jia, Y. Wen, Z. Chen, Y. Xie, C.-C. Guo, Y.-X. Xu, Y. |
| author_sort |
Jia, Y. |
| title |
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs |
| title_short |
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs |
| title_full |
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs |
| title_fullStr |
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs |
| title_full_unstemmed |
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs |
| title_sort |
threshold voltage model for charge trapping effect of algan/gan hemts |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2021 |
| url |
https://scholarbank.nus.edu.sg/handle/10635/212344 |
| _version_ |
1821198300580151296 |