A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

• Main Authors: Jia, Y., Wen, Z., Chen, Y., Xie, C.-C., Guo, Y.-X., Xu, Y.
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Subjects: dispersion; HEMTs; III-V semiconductor materials; scattering parameters; Semiconductor device modeling; threshold voltage
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/212344
• Institution: National University of Singapore

10.1109/ACCESS.2019.2937545