Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

10.1109/3.726618

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Bibliographic Details
Main Authors: Yeo, Y.C., Chong, T.C., Li, M.-F.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Gallium nitride
Optical materials/devices
Quantum wells
Semiconductor lasers
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62912
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/62912

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