Non-gold ohmic contact for GaN-on-Si HEMT

• Main Author: Zhuang, Yihao
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/167283
• Institution: Nanyang Technological University

High power high frequency HEMT transistors are transistors that run at high frequency (100 kHz and above) for high-speed switching and high-power delivering applications. Kinds of III-V semiconductor materials have been studied to be applied to HEMT like GaAs, InP, and GaN. Owing to the high breakdo...