Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current–voltage (I–V) measurements reveal that the conduction occurs primarily via thermionic emission (TE)....

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Bibliographic Details
Main Authors: Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Manoj Kumar, Chandra Mohan, Anand, Mulagumoottil Jesudas, Liu, Zhi Hong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
Online Access:https://hdl.handle.net/10356/98600
http://hdl.handle.net/10220/25661
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Institution: Nanyang Technological University
Language: English