On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon

Monolithic integration of AlGaN/GaN high electron mobility transistor (HEMT) into silicon (Si) platform is very attractive as this is a cost-effective solution to extend the capabilities of silicon technology especially for high power and high frequency applications. It is not only that Si substrate...

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Bibliographic Details
Main Author: Syaranamual, Govindo Joannesha
Other Authors: Gan Chee Lip
Format: Theses and Dissertations
Language:English
Published: 2018
Subjects:
Online Access:http://hdl.handle.net/10356/74934
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Institution: Nanyang Technological University
Language: English