On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon

• المؤلف الرئيسي: Syaranamual, Govindo Joannesha
• مؤلفون آخرون: Gan Chee Lip
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2018
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/74934
• المؤسسة: Nanyang Technological University

Monolithic integration of AlGaN/GaN high electron mobility transistor (HEMT) into silicon (Si) platform is very attractive as this is a cost-effective solution to extend the capabilities of silicon technology especially for high power and high frequency applications. It is not only that Si substrate...