Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE

• Main Authors: Sun, Z. Z., Radhakrishnan, K., Agrawal, M., Dharmarasu, Nethaji
• Format: Article
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/90410; http://hdl.handle.net/10220/6954
• Institution: Nanyang Technological University

We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical pro...