Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE
We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical pro...
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sg-ntu-dr.10356-904102020-03-07T13:57:24Z Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji DRNTU::Engineering::Materials::Microelectronics and semiconductor materials We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. Accepted version 2011-08-01T07:40:56Z 2019-12-06T17:47:18Z 2011-08-01T07:40:56Z 2019-12-06T17:47:18Z 2011 2011 Journal Article Dharmarasu, N., Radhakrishnan, K., Sun, Z. Z., & Agrawal, M. (2011). Realization of Two Dimensional Electron Gas in AlGaN/GaN HEMT Structure Grown on Si (111) by PA-MBE. Physica Status Solidi C, 8 (7-8), 2075–2077. https://hdl.handle.net/10356/90410 http://hdl.handle.net/10220/6954 10.1002/pssc.201001046 159549 Physica status solidi C © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
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DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
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We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100-mm Si (111) by PA-MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga-flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA-MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm-2. |
| format |
Article |
| author |
Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji |
| author_facet |
Sun, Z. Z. Radhakrishnan, K. Agrawal, M. Dharmarasu, Nethaji |
| author_sort |
Sun, Z. Z. |
| title |
Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_short |
Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_full |
Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_fullStr |
Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_full_unstemmed |
Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE |
| title_sort |
realization of two dimensional electron gas in algan/gan hemt structure grown on si (111) by pa-mbe |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/90410 http://hdl.handle.net/10220/6954 |
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1681037893219385344 |