Material characterization of AlGaN/GaN based HEMT structures
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in optoelectronic and microelectronic applications. This is based on nitrides having properties such as high mobility and high velocity of the electron-carriers. HEMTs (high electron mobility transistors)...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2014
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| Online Access: | http://hdl.handle.net/10356/60792 |
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| Institution: | Nanyang Technological University |
| Language: | English |