Material characterization of AlGaN/GaN based HEMT structures

• Main Author: Nur Hidayat Bin Hatwi
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/60792
• Institution: Nanyang Technological University

Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in optoelectronic and microelectronic applications. This is based on nitrides having properties such as high mobility and high velocity of the electron-carriers. HEMTs (high electron mobility transistors)...