A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

10.1109/ACCESS.2019.2937545

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書目詳細資料
Main Authors:	Jia, Y., Wen, Z., Chen, Y., Xie, C.-C., Guo, Y.-X., Xu, Y.
其他作者:	ELECTRICAL AND COMPUTER ENGINEERING
格式:	Article
出版:	Institute of Electrical and Electronics Engineers Inc. 2021
主題:	dispersion HEMTs III-V semiconductor materials scattering parameters Semiconductor device modeling threshold voltage
在線閱讀:	https://scholarbank.nus.edu.sg/handle/10635/212344
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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