Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

• المؤلفون الرئيسيون: Kim, TaeWan, Wang, Bing, Wang, Cong, Kohen, David A., Hwang, Jeong Woo, Shin, Jae Cheol, Kang, Sang-Woo, Michel, Jürgen
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: III-V semiconductors; Germanium
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83472; http://hdl.handle.net/10220/42610
• المؤسسة: Nanyang Technological University

Ga-rich InGaP materials are attractive applications for yellow-green spectral range optoelectronics such as light-emitting diodes and solar cells on silicon substrate. Bulk, Ga-rich InGaP films grown by metalorganic chemical vapor deposition on SiGe virtual substrates were investigated in the V/III...