Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation

10.1016/j.tsf.2006.07.103

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Bibliographic Details
Main Authors: Liu, C., Chor, E.F., Tan, L.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gallium nitride
Hafnium oxide
HEMT
Passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82503
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82503

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