Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications

• Main Authors: Dalapati, G.K., Kumar, A., Wong, A.S.W., Kumar, M.K., Chia, C.K., Ho, G.W., Chi, D.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Epi-GaAs; Frequency dispersion; GaAs-MOS capacitor; High-k; III-V semiconductor
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84217
• Institution: National University of Singapore

10.4028/www.scientific.net/KEM.443.504