Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications

10.4028/www.scientific.net/KEM.443.504

Saved in:
Bibliographic Details
Main Authors: Dalapati, G.K., Kumar, A., Wong, A.S.W., Kumar, M.K., Chia, C.K., Ho, G.W., Chi, D.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84217
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-84217
record_format dspace
spelling sg-nus-scholar.10635-842172023-10-25T22:26:51Z Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications Dalapati, G.K. Kumar, A. Wong, A.S.W. Kumar, M.K. Chia, C.K. Ho, G.W. Chi, D. ELECTRICAL & COMPUTER ENGINEERING Epi-GaAs Frequency dispersion GaAs-MOS capacitor High-k III-V semiconductor 10.4028/www.scientific.net/KEM.443.504 Key Engineering Materials 443 504-509 KEMAE 2014-10-07T04:50:09Z 2014-10-07T04:50:09Z 2010 Conference Paper Dalapati, G.K., Kumar, A., Wong, A.S.W., Kumar, M.K., Chia, C.K., Ho, G.W., Chi, D. (2010). Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications. Key Engineering Materials 443 : 504-509. ScholarBank@NUS Repository. https://doi.org/10.4028/www.scientific.net/KEM.443.504 0878492674 10139826 http://scholarbank.nus.edu.sg/handle/10635/84217 000283804900085 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Epi-GaAs
Frequency dispersion
GaAs-MOS capacitor
High-k
III-V semiconductor
spellingShingle Epi-GaAs
Frequency dispersion
GaAs-MOS capacitor
High-k
III-V semiconductor
Dalapati, G.K.
Kumar, A.
Wong, A.S.W.
Kumar, M.K.
Chia, C.K.
Ho, G.W.
Chi, D.
Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
description 10.4028/www.scientific.net/KEM.443.504
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Dalapati, G.K.
Kumar, A.
Wong, A.S.W.
Kumar, M.K.
Chia, C.K.
Ho, G.W.
Chi, D.
format Conference or Workshop Item
author Dalapati, G.K.
Kumar, A.
Wong, A.S.W.
Kumar, M.K.
Chia, C.K.
Ho, G.W.
Chi, D.
author_sort Dalapati, G.K.
title Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
title_short Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
title_full Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
title_fullStr Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
title_full_unstemmed Sputter-deposited ZrO2 gate dielectric on high mobility epitaxial-GaAs/Ge channel material for advanced CMOS applications
title_sort sputter-deposited zro2 gate dielectric on high mobility epitaxial-gaas/ge channel material for advanced cmos applications
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84217
_version_ 1781784432550608896