Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires

• المؤلفون الرئيسيون: Delos Santos, Ramon M, Ibañes, Jasher John, Balgos, Maria Herminia, Jaculbia, Rafael, Afalla, Jessica Pauline, Bailon-Somintac, Michelle, Estacio, Elmer, Salvador, Arnel, Somintac, Armando, Que, Christopher, Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko
• التنسيق: text
• منشور في: Archīum Ateneo 2015
• الموضوعات: Optical properties of nanowires; Time-resolved spectroscopy; Infrared and Raman spectra of III-V semiconductors; Molecular beam epitaxy; Semiconducting gallium arsenide; Optical properties of semiconductors; Atomic, Molecular and Optical Physics; Physics
• الوصول للمادة أونلاين: https://archium.ateneo.edu/physics-faculty-pubs/51; https://archium.ateneo.edu/cgi/viewcontent.cgi?article=1050&context=physics-faculty-pubs

GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al0.1Ga0.9As bandgap emiss...