Dynamics of optically-generated carriers in Si (100) and Si (111) substrate-grown GaAs/AlGaAs core-shell nanowires

Dynamics of optically-generated carriers in Si (100) and Si (111) substrate-grown GaAs/AlGaAs core-shell nanowires

GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al0.1Ga0.9As bandgap emiss...

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Main Authors: delos Santos, Ramon, Ibañes, Jasher John, Balgos, Maria Herminia, Jaculbia, Rafael, Afalla, Jessica Pauline, Bailon-Somintac, Michelle, Estacio, Elmer, Salvador, Arnel A., Somintac, Armando, Que, Christopher T., Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko
Format: text
Published: Animo Repository 2015
Subjects:
Gallium arsenide semiconductors
Infrared spectroscopy
Molecular beam epitaxy
Nanowires—Optical properties
Semiconductors—Optical properties
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/3517
https://animorepository.dlsu.edu.ph/context/faculty_research/article/4519/type/native/viewcontent/s11671_015_1050_9.html
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Institution: De La Salle University

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https://animorepository.dlsu.edu.ph/faculty_research/3517
https://animorepository.dlsu.edu.ph/context/faculty_research/article/4519/type/native/viewcontent/s11671_015_1050_9.html

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