The effect of arsenic on MBE-grown modulation-doped GaAs/AlGaAs heterostructures

• المؤلفون الرئيسيون: Patricio, Michelee G., Estacio, Elmer, Somintac, Armando, Podpod, Arnita, Dorilas, Raphael B., Salvador, Arnel A.
• التنسيق: text
• منشور في: Animo Repository 2002
• الموضوعات: Gallium arsenide; Heterostructures; Physics
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/5504
• المؤسسة: De La Salle University

In this paper, the effect of As on the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures were investigated by varying the As flux during the MBE growth of the samples. Hall measurements using the van der Pauw configuration determined the carrier concentration and...