The effect of arsenic on MBE-grown modulation-doped GaAs/AlGaAs heterostructures

In this paper, the effect of As on the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures were investigated by varying the As flux during the MBE growth of the samples. Hall measurements using the van der Pauw configuration determined the carrier concentration and...

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Bibliographic Details
Main Authors: Patricio, Michelee G., Estacio, Elmer, Somintac, Armando, Podpod, Arnita, Dorilas, Raphael B., Salvador, Arnel A.
Format: text
Published: Animo Repository 2002
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Online Access:https://animorepository.dlsu.edu.ph/faculty_research/5504
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Institution: De La Salle University