Dynamics of optically-generated carriers in Si (100) and Si (111) substrate-grown GaAs/AlGaAs core-shell nanowires

• Main Authors: delos Santos, Ramon, Ibañes, Jasher John, Balgos, Maria Herminia, Jaculbia, Rafael, Afalla, Jessica Pauline, Bailon-Somintac, Michelle, Estacio, Elmer, Salvador, Arnel A., Somintac, Armando, Que, Christopher T., Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko
• Format: text
• Published: Animo Repository 2015
• Subjects: Gallium arsenide semiconductors; Infrared spectroscopy; Molecular beam epitaxy; Nanowires—Optical properties; Semiconductors—Optical properties; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/3517; https://animorepository.dlsu.edu.ph/context/faculty_research/article/4519/type/native/viewcontent/s11671_015_1050_9.html
• Institution: De La Salle University

GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al0.1Ga0.9As bandgap emiss...