Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

10.1016/j.sse.2013.02.036

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Bibliographic Details
Main Authors: Kong, E.Y.-J., Ivana, Zhang, X., Zhou, Q., Pan, J., Zhang, Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
III-V
InGaAs
Palladium
Pd-InGaAs
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82576
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82576

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