Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

10.1016/j.sse.2013.02.036

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Bibliographic Details
Main Authors:	Kong, E.Y.-J., Ivana, Zhang, X., Zhou, Q., Pan, J., Zhang, Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	III-V InGaAs Palladium Pd-InGaAs
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82576
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82576
record_format	dspace
spelling	sg-nus-scholar.10635-825762024-11-10T04:42:22Z Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors Kong, E.Y.-J. Ivana Zhang, X. Zhou, Q. Pan, J. Zhang, Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING III-V InGaAs Palladium Pd-InGaAs 10.1016/j.sse.2013.02.036 Solid-State Electronics 85 36-42 SSELA 2014-10-07T04:31:00Z 2014-10-07T04:31:00Z 2013 Article Kong, E.Y.-J., Ivana, Zhang, X., Zhou, Q., Pan, J., Zhang, Z., Yeo, Y.-C. (2013). Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors. Solid-State Electronics 85 : 36-42. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2013.02.036 00381101 http://scholarbank.nus.edu.sg/handle/10635/82576 000320424500007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	III-V InGaAs Palladium Pd-InGaAs
spellingShingle	III-V InGaAs Palladium Pd-InGaAs Kong, E.Y.-J. Ivana Zhang, X. Zhou, Q. Pan, J. Zhang, Z. Yeo, Y.-C. Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
description	10.1016/j.sse.2013.02.036
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kong, E.Y.-J. Ivana Zhang, X. Zhou, Q. Pan, J. Zhang, Z. Yeo, Y.-C.
format	Article
author	Kong, E.Y.-J. Ivana Zhang, X. Zhou, Q. Pan, J. Zhang, Z. Yeo, Y.-C.
author_sort	Kong, E.Y.-J.
title	Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
title_short	Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
title_full	Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
title_fullStr	Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
title_full_unstemmed	Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
title_sort	investigation of pd-ingaas for the formation of self-aligned source/drain contacts in ingaas metal-oxide-semiconductor field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82576
_version_	1821192631508533248

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors

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