The dynamics of nickelidation for self-aligned contacts to InGaAs channels

• Main Authors: Chen, Renjie, Dai, Xing, Jungjohann, Katherine L., Mook, William Moyer, Nogan, John, Soci, Cesare, Dayeh, Shadi
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2019
• Subjects: AFM Topography; InGaAs; DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/106868; http://hdl.handle.net/10220/48992
• Institution: Nanyang Technological University

The rapid development of ultrascaled III−V compound-semiconductor devices requires the detailed investigation of metal-semiconductor contacts at the nanoscale where crystal orientation, size, and structural phase play dominant roles in device performance. Here, we report comprehensive studies on the...