Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

Ph.D

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Bibliographic Details
Main Author: ZHANG XINGUI
Other Authors: NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
Self-Aligned, S/D Contact, III-V transistors, FinFET, InGaAs
Online Access:http://scholarbank.nus.edu.sg/handle/10635/37469
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Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/37469

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