Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

Ph.D

Saved in:

Bibliographic Details
Main Author:	ZHANG XINGUI
Other Authors:	NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG
Format:	Theses and Dissertations
Language:	English
Published:	2013
Subjects:	Self-Aligned, S/D Contact, III-V transistors, FinFET, InGaAs
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/37469
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Similar Items

Contact and source/drain engineering for advanced III-V field-effect transistors
by: KONG YU JIN EUGENE
Published: (2014)

Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal-oxide-semiconductor field-effect transistors
by: Kong, E.Y.-J., et al.
Published: (2014)

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
by: Ivana, et al.
Published: (2014)

III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
by: Chin, H.-C., et al.
Published: (2014)

Advanced source and drain contact engineering for multiple- gate transistors
by: LEE TEK PO RINUS
Published: (2010)

Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors
by: Chin, H.-C., et al.
Published: (2014)

SOURCE AND DRAIN EXTERNAL RESISTANCE REDUCTION FOR ADVANCED TRANSISTORS
by: KOH SHAO MING
Published: (2012)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
by: Liow, T.-Y., et al.
Published: (2014)

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)
by: Lee, R.T.P., et al.
Published: (2014)

Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
by: Sinha, M., et al.
Published: (2014)

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
by: Lee, R.T.P., et al.
Published: (2014)

InGaAs N-MOSFETS with CMOS Compatible Source/Drain Technology and the Integration on Si Platform
by: IVANA
Published: (2013)

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
by: Koh, S.-M., et al.
Published: (2014)

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
by: Koh, S.-M., et al.
Published: (2014)

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
by: Lin, J.Q., et al.
Published: (2014)

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
by: Tan, K.-M., et al.
Published: (2014)

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
by: Lee, R.T.P., et al.
Published: (2014)

P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
by: Lee, R.T.-P., et al.
Published: (2014)

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014)

Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors
by: MANTAVYA SINHA
Published: (2010)

Schottky Barrier Engineering for Contacts in Advanced CMOS Technology
by: PHYLLIS LIM SHI YA
Published: (2012)

In0.3Ga0.7As heterojunction bipolar transistor grown on GeSi substrate for high-frequency application
by: Loke, Wan Khai, et al.
Published: (2022)

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
by: Liow, T.-Y., et al.
Published: (2014)

Novel III-V mosfet integrated with high-k dielectric and metal gate for future CMOS technology
by: LIN JIANQIANG
Published: (2010)

Source / Drain Engineering in InGaAs n-MOSFETs for Logic Device Applications
by: SUJITH SUBRAMANIAN
Published: (2014)

Drive-current enhancement in FinFETs using gate-induced stress
by: Tan, K.-M., et al.
Published: (2014)

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor
by: Tan, K.-M., et al.
Published: (2014)

Strain engineering for advanced transistor structure
by: TAN KIAN MING
Published: (2010)

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content
by: Liow, T.-Y., et al.
Published: (2014)

Metrology solutions for high performance germanium multi-gate field-effect transistors using optical scatterometry
by: Chin, H.-C., et al.
Published: (2014)

Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
by: Zhao, H., et al.
Published: (2014)

TCAD MODELLING AND CHARACTERIZATION OF DEFECTS IN ADVANCED NANOSCALE SEMICONDUCTOR DEVICES
by: TEO CHEA WEI
Published: (2019)

Fabrication, characterization, and modeling of silicon multi-gate devices
by: ZHAO HUI
Published: (2010)

Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors
by: Tan, K.-M., et al.
Published: (2014)

Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors
by: Tan, K.-M., et al.
Published: (2014)

Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
by: Liu, B., et al.
Published: (2014)

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
by: Tan, K.-M., et al.
Published: (2014)

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
by: Lee, R.T.-P., et al.
Published: (2014)

The dynamics of nickelidation for self-aligned contacts to InGaAs channels
by: Chen, Renjie, et al.
Published: (2019)