N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

10.1109/LED.2006.889233

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Bibliographic Details
Main Authors: Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFET
Multiple-gate transistor
Rare earth metal
Schottky
Silicide YbSi
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82747
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82747

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