N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

10.1109/LED.2006.889233

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Bibliographic Details
Main Authors:	Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	FinFET Multiple-gate transistor Rare earth metal Schottky Silicide YbSi
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82747
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82747
record_format	dspace
spelling	sg-nus-scholar.10635-827472023-10-30T08:02:22Z N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide Lee, R.T.P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING FinFET Multiple-gate transistor Rare earth metal Schottky Silicide YbSi 10.1109/LED.2006.889233 IEEE Electron Device Letters 28 2 164-167 EDLED 2014-10-07T04:33:01Z 2014-10-07T04:33:01Z 2007-02 Article Lee, R.T.P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2007-02). N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide. IEEE Electron Device Letters 28 (2) : 164-167. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.889233 07413106 http://scholarbank.nus.edu.sg/handle/10635/82747 000243915100026 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	FinFET Multiple-gate transistor Rare earth metal Schottky Silicide YbSi
spellingShingle	FinFET Multiple-gate transistor Rare earth metal Schottky Silicide YbSi Lee, R.T.P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C. N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
description	10.1109/LED.2006.889233
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, R.T.P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C.
format	Article
author	Lee, R.T.P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C.
author_sort	Lee, R.T.P.
title	N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
title_short	N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
title_full	N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
title_fullStr	N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
title_full_unstemmed	N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
title_sort	n-channel finfets with 25-nm gate length and schottky-barrier source and drain featuring ytterbium silicide
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82747
_version_	1781784213160198144

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide

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