P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

10.1109/LED.2008.920755

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Bibliographic Details
Main Authors: Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFET
Nickel platinum
Nickel silicide
Resistance
Schottky barriers
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82868
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82868

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