Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance

10.1109/LED.2009.2017213

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Bibliographic Details
Main Authors: Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
External resistance
FinFET
Platinum silicide
Schottky barrier
Silicon carbon
Sulfur
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83114
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83114

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