Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

• Main Authors: Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: FinFETs; Nickel; NiSi; Parasitic resistance; Silicide
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/81929
• 機構: National University of Singapore

10.1109/LED.2008.917813