Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

10.1109/LED.2008.917813

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Bibliographic Details
Main Authors: Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFETs
Nickel
NiSi
Parasitic resistance
Silicide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81929
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2008.917813

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