Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

10.1109/LED.2008.917813

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Bibliographic Details
Main Authors: Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFETs
Nickel
NiSi
Parasitic resistance
Silicide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81929
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-819292023-10-30T08:07:32Z Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths Lee, R.T.-P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Koh, A.T.-Y. Zhu, M. Lo, G.-Q. Samudra, G.S. Chi, D.Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING FinFETs Nickel NiSi Parasitic resistance Silicide 10.1109/LED.2008.917813 IEEE Electron Device Letters 29 4 382-385 EDLED 2014-10-07T04:23:21Z 2014-10-07T04:23:21Z 2008-04 Article Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C. (2008-04). Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths. IEEE Electron Device Letters 29 (4) : 382-385. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.917813 07413106 http://scholarbank.nus.edu.sg/handle/10635/81929 000254225800032 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic FinFETs
Nickel
NiSi
Parasitic resistance
Silicide
spellingShingle FinFETs
Nickel
NiSi
Parasitic resistance
Silicide
Lee, R.T.-P.
Liow, T.-Y.
Tan, K.-M.
Lim, A.E.-J.
Koh, A.T.-Y.
Zhu, M.
Lo, G.-Q.
Samudra, G.S.
Chi, D.Z.
Yeo, Y.-C.
Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
description 10.1109/LED.2008.917813
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Lee, R.T.-P.
Liow, T.-Y.
Tan, K.-M.
Lim, A.E.-J.
Koh, A.T.-Y.
Zhu, M.
Lo, G.-Q.
Samudra, G.S.
Chi, D.Z.
Yeo, Y.-C.
format Article
author Lee, R.T.-P.
Liow, T.-Y.
Tan, K.-M.
Lim, A.E.-J.
Koh, A.T.-Y.
Zhu, M.
Lo, G.-Q.
Samudra, G.S.
Chi, D.Z.
Yeo, Y.-C.
author_sort Lee, R.T.-P.
title Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
title_short Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
title_full Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
title_fullStr Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
title_full_unstemmed Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
title_sort achieving conduction band-edge schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in finfets with ultra-narrow fin widths
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81929
_version_ 1781784019275350016

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