Source and drain series resistance reduction for N-channel transistors using solid antimony (Sb) segregation (SSbS) during silicidation

by Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors

by Lee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C.
Published 2014

Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction

by Lim, A.E.-J., Lee, R.T.P., Koh, A.T.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C.
Published 2014

A new salicidation process with solid Antimony (Sb) segregation (SSbS) for achieving sub-0.1 eV effective schottky barrier height and parasitic series resistance reduction in N-cha...

by Wong, H.-S., Koh, A.T.-Y., Chin, H.-C., Lee, R.T.-P., Chan, L., Samudra, G., Yeo, Y.-C.
Published 2014

Ceftriaxone-resistant Salmonella spp. in Singapore

by Tse, H.K., Koh, A.E.Y.Q., Hamdan, A.B., Boon, C.K., Yu, V.Y., Lin, R.V.T.P., Tee, N.W.S.
Published 2016

Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

by Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

by Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths

by Lee, R.T.-P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Koh, A.T.-Y., Zhu, M., Lo, G.-Q., Samudra, G.S., Chi, D.Z., Yeo, Y.-C.
Published 2014

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Koh, S.-M., Koh, A.T.-Y., Liow, T.-Y., Lee, R.T.-P., Lim, A.E.-J., Fang, W.-W., Zhu, M., Chan, L., Balasubramaniam, N., Samudra, G., Yeo, Y.-C.
Published 2014

Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced perf...

by Lee, R.T.-P., Koh, A.T.-Y., Fang, W.-W., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Chow, S.-Y., Yong, A.M., Hoong, S.W., Lo, G.-Q., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

by Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014