Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C.
Published 2014

Quantitative Physical Fitness Measures Inversely Associated With Myopia Severity in Military Males: The CHIEF Study

by Lu, S.-C., Liu, F.-Y., Hsieh, C.-J., Su, F.-Y., Wong, T.Y., Tai, M.-C., Chen, J.-T., Lin, G.-M.
Published 2021

Pulsed laser annealing of silicon-carbon source/drain in MuGFETs for enhanced dopant activation and high substitutional carbon concentration

by Koh, A.T.-Y., Lee, R.T.-P., Liu, F.-Y., Liow, T.-Y., Tan, K.M., Wang, X., Samudra, G.S., Balasubramanian, N., Chi, D.-Z., Yeo, Y.-C.
Published 2014

Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressors

by Wong, H.-S., Liu, F.-Y., Ang, K.-W., Koh, S.-M., Koh, A.T.-Y., Liow, T.-Y., Lee, R.T.-P., Lim, A.E.-J., Fang, W.-W., Zhu, M., Chan, L., Balasubramaniam, N., Samudra, G., Yeo, Y.-C.
Published 2014

Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealing

by Lee, R.T.-P., Koh, A.T.-Y., Liu, F.-Y., Fang, W.-W., Liow, T.-Y., Tan, K.-M., Lim, P.-C., Lim, A.E.-J., Zhu, M., Hoe, K.-M., Tung, C.-H., Lo, G.-Q., Wang, X., Low, D.K.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C.
Published 2014