Radio-translucent 3-axis mechanical testing rig for the spine in micro-CT

by Si-Hoe, K.M., Teoh, S.H., Teo, J.
Published 2014

Correlation of cancellous bone microarchitectural parameters from microCT to CT number and bone mechanical properties

by Teo, J.C.M., Si-Hoe, K.M., Keh, J.E.L., Teoh, S.H.
Published 2014

Relationship between CT intensity, micro-architecture and mechanical properties of porcine vertebral cancellous bone

by Teo, J.C.M., Si-Hoe, K.M., Keh, J.E.L., Teoh, S.H.
Published 2014

Strain relaxed high quality silicon-germanium-on-insulator substrates formed by pulsed laser irradiation technology

by Wang, G.H., Toh, E.-H., Wang, X., Hoe, K.-M., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Published 2014

Sub 50nm strained n-FETs formed on silicon-germanium-on-insulator substrates and the integration of silicon source/drain stressors

by Wang, G.H., Toh, E.-H., Hoe, K.-M., Tripathy, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner

by Wang, G.H., Toh, E.-H., Toh, Hoe, K.M., Tripathy, S., Balakurnar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

by Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors

by Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors

by Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor

by Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

by Wang, G.H., Toh, E.-H., Wang, X., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.-M., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Polycaprolactone-20% Tricalcium Phosphate Scaffolds in Combination With Platelet-Rich Plasma for the Treatment of Critical-Sized Defects of the Mandible: A Pilot Study

by Rai, B., Ho, K.H., Lei, Y., Si-Hoe, K.-M., Jeremy Teo, C.-M., Yacob, K.b., Chen, F., Ng, F.-C., Teoh, S.H.
Published 2014

Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors

by Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Source/drain-extension-last process for incorporating in situ doped lattice-mismatched extension stressor for enhanced performance in SOI N-FET

by Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramaniam, N., Weeks, D., Landin, T., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

by Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

by Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

by Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Published 2014

Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

by Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Published 2014

Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon content

by Liow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs

by Wang, G.H., Toh, E.-H., Wang, X., Seng, D.H.L., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.M., Balakumar, S., Tung, C.H., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014