Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide

by Zhu, M., Tung, C.-H., Yeo, Y.-C.
Published 2014

Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method

by Sheng, T.T., Goh, G.P., Tung, C.H., Wang, L.F.
Published 2014

In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications

by Zhu, M., Chin, H.-C., Tung, C.-H., Yeo, Y.-C.
Published 2014

Physical analysis of Ti-migration in 33 Å gate oxide breakdown

by Pey, K.L., Tung, C.H., Lin, W.H., Radhakrishnan, M.K.
Published 2014

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure

by Ang, K.-W., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETs

by Chin, H.-C., Zhu, M., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
Published 2014

Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode

by Gao, F., Li, R., Chi, D.Z., Balakumar, S., Tung, C.-H., Lee, S.J.
Published 2014

FIB precision TEM sample preparation using carbon replica

by Sheng, T.T., Goh, G.P., Tung, C.H., Wang, John L.F., Cheng, Jeng Kou
Published 2014

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

by Wang, G.H., Toh, E.-H., Tung, C.-H., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Published 2014

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs

by Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G., Yeo, Y.-C.
Published 2014

Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance

by Ang, K.-W., Lin, J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors

by Chin, H.-C., Zhu, M., Whang, S.-J., Tung, C.-H., Samudra, G.S., Yeo, Y.-C.
Published 2014

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

by Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
Published 2014

Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

by Tang, L.J., Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Lin, W.H.
Published 2014

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Samudra, G., Balasubramanian, N., Yeo, Y.-C.
Published 2014

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions

by Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Published 2014

Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon

by Chong, Y.F., Pey, K.L., Wee, A.T.S., Thompson, M.O., Tung, C.H., See, A.
Published 2014

Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2

by Ho, V., Choi, W.K., Chim, W.K., Teo, L.W., Du, A.Y., Tung, C.H.
Published 2014

Schottky source/drain transistor on thin SiGe on insulator integrated with HfO2/TaN gate stack

by Gao, F., Lee, S.J., Li, R., Balakumar, S., Tung, C.-H., Chi, D.-Z., Kwong, D.-L.
Published 2014

Confinement of nanocrystals and possible charge storage mechanism for MIS memory devices with ge nanocrystals embedded in SiO 2

by Ho, V., Choi, W.K., Chim, W.K., Teo, L.W., Du, A.Y., Tung, C.H.
Published 2014