Die attach failures related to wafer back metal processing - An AES study

by Radhakrishnan, M.K.
Published 2014

Device reliability and failure mechanisms related to gate dielectrics and interconnects

by Radhakrishnan, M.K.
Published 2014

Expanded Papers From the 2003 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

by Pey, K.L., Radhakrishnan, M.K., Trigg, A.
Published 2014

Physical analysis of Ti-migration in 33 Å gate oxide breakdown

by Pey, K.L., Tung, C.H., Lin, W.H., Radhakrishnan, M.K.
Published 2014

Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors

by Pey, K.L., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
Published 2014

Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

by Tang, L.J., Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Lin, W.H.
Published 2014

Gate dielectric degradation mechanism associated with DBIE evolution

by Pey, K.L., Ranjan, R., Tung, C.H., Tang, L.J., Lin, W.H., Radhakrishnan, M.K.
Published 2014

Geometry dependence of gate oxide breakdown evolution

by Sun, Y., Pey, K.L., Tung, C.H., Lombardo, S., Palumbo, F., Tang, L.J., Radhakrishnan, M.K.
Published 2014

Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy

by Pey, K.L., Tung, C.H., Tang, L.J., Ranjan, R., Radhakrishnan, M.K., Lin, W.H., Lombardo, S., Palumbo, F.
Published 2014

Structure of the breakdown spot during progressive breakdown of ultra-thin gate oxides

by Palumbo, F., Lombardo, S., Pey, K.L., Tang, L.J., Tung, C.H., Lin, W.H., Radhakrishnan, M.K., Falci, G.
Published 2014

Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

by Gan, C.L., Thompson, C.V., Pey, K.L., Choi, W.K., Tay, H.L., Yu, B., Radhakrishnan, M.K.
Published 2014

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

by Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Tang, L.J., Sun, Y., Wang, X.D., Lin, W.H.
Published 2014

A new breakdown failure mechanism in HfO 2 gate dielectric

by Ranjan, R., Pey, K.L., Tang, L.J., Tung, C.H., Groeseneken, G., Radhakrishnan, M.K., Kaczer, B., Degraeve, R., De Gendt, S.
Published 2014

Length effects on the reliability of dual-damascene Cu interconnects

by Wei, F., Gan, C.L., Thompson, C.V., Clement, J.J., Hau-Riege, S.P., Pey, K.L., Choi, W.K., Tay, H.L., Yu, B., Radhakrishnan, M.K.
Published 2014