Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

10.1109/TDMR.2004.824374

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Bibliographic Details
Main Authors: Tang, L.J., Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Lin, W.H.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Breakdown
Dielectric-breakdown-induced epitaxy
Gate dielectrics
Gate oxide
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/115430
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/115430

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