A new breakdown failure mechanism in HfO 2 gate dielectric

• Main Authors: Ranjan, R., Pey, K.L., Tang, L.J., Tung, C.H., Groeseneken, G., Radhakrishnan, M.K., Kaczer, B., Degraeve, R., De Gendt, S.
• Other Authors: INSTITUTE OF MICROELECTRONICS
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Breakdown; Dielectric-breakdown- induced epitaxy; HfO 2; High-k gate dielectrics
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/115364
• Institution: National University of Singapore

Annual Proceedings - Reliability Physics (Symposium)