A new breakdown failure mechanism in HfO 2 gate dielectric

Annual Proceedings - Reliability Physics (Symposium)

Saved in:
Bibliographic Details
Main Authors: Ranjan, R., Pey, K.L., Tang, L.J., Tung, C.H., Groeseneken, G., Radhakrishnan, M.K., Kaczer, B., Degraeve, R., De Gendt, S.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/115364
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Similar Items