Reliability improvement using buried capping layer in advanced interconnects

Reliability improvement using buried capping layer in advanced interconnects

Annual Proceedings - Reliability Physics (Symposium)

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Bibliographic Details
Main Authors: Yiang, K.Y., Mok, T.S., Yoo, W.J., Krishnamoorthy, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Conduction mechanism
Dielectric breakdown
Interconnects
Low-k leakage current
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71607
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/71607

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