Reliability improvement using buried capping layer in advanced interconnects
Annual Proceedings - Reliability Physics (Symposium)
Saved in:
Main Authors: | Yiang, K.Y., Mok, T.S., Yoo, W.J., Krishnamoorthy, A. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/71607 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments
by: Krishnamoorthy, A., et al.
Published: (2014) -
Impact of buried capping layer on TDDB physics of advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014) -
Intra-level dielectric reliability in deep sub-micron copper interconnects
by: NGWAN VOON CHENG
Published: (2010) -
Study of leakage mechanisms of the copper/Black Diamond™ damascene process
by: Yiang, K.Y., et al.
Published: (2014) -
Impact of buried capping layer on electrical stablity of advanced interconnects
by: Yiang, K.Y., et al.
Published: (2014)