Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy

• Main Authors: Yu, X., Huang, J., Yu, M., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Conducting atomic force microscopy (C-AFM); Gate doping concentration; High-κ gate dielectric; Leakage current; Leakage path; Poly-Si gate
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82198
• Institution: National University of Singapore

10.1109/LED.2007.895404