Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy

10.1109/LED.2007.895404

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Bibliographic Details
Main Authors:	Yu, X., Huang, J., Yu, M., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Conducting atomic force microscopy (C-AFM) Gate doping concentration High-κ gate dielectric Leakage current Leakage path Poly-Si gate
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82198
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82198
record_format	dspace
spelling	sg-nus-scholar.10635-821982023-10-29T23:12:47Z Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy Yu, X. Huang, J. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Conducting atomic force microscopy (C-AFM) Gate doping concentration High-κ gate dielectric Leakage current Leakage path Poly-Si gate 10.1109/LED.2007.895404 IEEE Electron Device Letters 28 5 373-375 EDLED 2014-10-07T04:26:32Z 2014-10-07T04:26:32Z 2007-05 Article Yu, X., Huang, J., Yu, M., Zhu, C. (2007-05). Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy. IEEE Electron Device Letters 28 (5) : 373-375. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.895404 07413106 http://scholarbank.nus.edu.sg/handle/10635/82198 000246191700014 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Conducting atomic force microscopy (C-AFM) Gate doping concentration High-κ gate dielectric Leakage current Leakage path Poly-Si gate
spellingShingle	Conducting atomic force microscopy (C-AFM) Gate doping concentration High-κ gate dielectric Leakage current Leakage path Poly-Si gate Yu, X. Huang, J. Yu, M. Zhu, C. Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy
description	10.1109/LED.2007.895404
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, X. Huang, J. Yu, M. Zhu, C.
format	Article
author	Yu, X. Huang, J. Yu, M. Zhu, C.
author_sort	Yu, X.
title	Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy
title_short	Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy
title_full	Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy
title_fullStr	Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy
title_full_unstemmed	Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy
title_sort	effect of gate dopant diffusion on leakage current in n+poly-si/hfo2 and examination of leakage paths by conducting atomic force microscopy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82198
_version_	1781784078744289280

Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy

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